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DO-201AD
Discrete Semiconductor Products

1N5401-G

Active
Comchip Technology

DIODE GEN PURP 100V 3A DO27

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DO-201AD
Discrete Semiconductor Products

1N5401-G

Active
Comchip Technology

DIODE GEN PURP 100V 3A DO27

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification1N5401-G
Current - Average Rectified (Io)3 A
Current - Reverse Leakage5 µA
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)125 °C
Operating Temperature - Junction (Min)-65 °C
Package / CaseDO-201AD, Axial
Package NameDO-27 (DO-201AD)
SpeedStandard Recovery
Speed - Fast Recovery (Minimum)200 mA, 500 ns
Speed - Recovery Current200 mA, 200 mA
Speed - Recovery Time500 ns
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max)950 mV, 950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyCut Tape (CT) 1$ 0.411m+
10$ 0.32
100$ 0.19
500$ 0.18
N/A 2023$ 0.331m+
Tape & Reel (TR) 1200$ 0.121m+
2400$ 0.11
6000$ 0.11
12000$ 0.10
30000$ 0.09
60000$ 0.09

CAD

3D models and CAD resources for this part

Description

General part information

1N5401 Series

Diode 100 V 3A Through Hole DO-27 (DO-201AD)

Documents

Technical documentation and resources

No documents available