Discrete Semiconductor Products

CPH3350-TL-W

Obsolete

P-CHANNEL POWER MOSFET, -20V, -3A, 83MΩ

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Discrete Semiconductor Products

Obsolete

P-CHANNEL POWER MOSFET, -20V, -3A, 83MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	CPH3350-TL-W

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.6 nC
Input Capacitance (Ciss) (Max) @ Vds	375 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	83 mOhm
Supplier Device Package	3-CPH
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V

P-Channel Power MOSFET, -20V, -3A, 83mΩ

Part	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)
ON Semiconductor CPH3350-TL-W	150 °C	1.8 V 4.5 V	3 A	83 mOhm	Surface Mount	20 V	P-Channel	10 V	3-CPH	MOSFET (Metal Oxide)	375 pF	SC-59 SOT-23-3 TO-236-3	4.6 nC	1 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

CPH3350 is a P-Channel Power MOSFET, -20V, -3A, 83mΩ, Single CPH3 for General-Purpose Switching Device Applications.