Discrete Semiconductor Products

IRFI520GPBF

LTB

MOSFET N-CH 100V 7.2A TO220-3

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Discrete Semiconductor Products

LTB

MOSFET N-CH 100V 7.2A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRFI520GPBF

Current - Continuous Drain (Id) @ 25°C	7.2 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	16 nC
Input Capacitance (Ciss) (Max) @ Vds	360 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max) [Max]	37 W
Rds On (Max) @ Id, Vgs [Max]	270 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division IRFI520GPBF	N-Channel	10 V	TO-220-3 Full Pack Isolated Tab	360 pF	Through Hole	270 mOhm	MOSFET (Metal Oxide)	16 nC	37 W	7.2 A	-55 °C	175 ░C	TO-220-3	20 V	100 V	4 V

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General part information

N-Channel 100 V 7.2A (Tc) 37W (Tc) Through Hole TO-220-3

Technical documentation and resources