Discrete Semiconductor Products

SSM3J375F,LXHF

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HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -20 V, -2.0 A, 0.15 Ω@4.5V, SOT-346(S-MINI)

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Discrete Semiconductor Products

Active

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -20 V, -2.0 A, 0.15 Ω@4.5V, SOT-346(S-MINI)

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J375F,LXHF

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.5 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	4.6 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	270 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	600 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	S-Mini
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	6 V, -8 V
Vgs(th) (Max) @ Id	1 V

Part	Power Dissipation (Max) [Max]	Supplier Device Package	Operating Temperature	Vgs (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	FET Type	Package / Case	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Qualification	Grade
Toshiba Semiconductor and Storage SSM3J375F,LF	600 mW	S-Mini	150 °C	-8 V 6 V	1.5 V 4.5 V	Surface Mount	2 A	MOSFET (Metal Oxide)	270 pF	1 V	P-Channel	SC-59 SOT-23-3 TO-236-3	150 mOhm	4.6 nC	20 V
Toshiba Semiconductor and Storage SSM3J375F,LXHF	600 mW	S-Mini	150 °C	-8 V 6 V	1.5 V 4.5 V	Surface Mount	2 A	MOSFET (Metal Oxide)	270 pF	1 V	P-Channel	SC-59 SOT-23-3 TO-236-3	150 mOhm	4.6 nC	20 V	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 2A (Ta) 600mW (Ta) Surface Mount S-Mini

Technical documentation and resources