Discrete Semiconductor Products

NP90N055VUK-E1-AY

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MOSFET N-CH 55V 90A TO252-3

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Discrete Semiconductor Products

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MOSFET N-CH 55V 90A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	NP90N055VUK-E1-AY

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	102 nC
Input Capacitance (Ciss) (Max) @ Vds	6000 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	147 W, 1.2 W
Rds On (Max) @ Id, Vgs	3.85 mOhm
Supplier Device Package	TO-252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Operating Temperature
Renesas Electronics Corporation NP90N055VUK-E1-AY	MOSFET (Metal Oxide)	90 A	3.85 mOhm	6000 pF	55 V	20 V	1.2 W 147 W	4 V	N-Channel	TO-252-3	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	102 nC	Surface Mount	175 °C

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General part information

N-Channel 55 V 90A (Tc) 1.2W (Ta), 147W (Tc) Surface Mount TO-252-3

Technical documentation and resources