Discrete Semiconductor Products

6A80GH

NRND

DIODE GEN PURP 800V 6A R-6

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Discrete Semiconductor Products

NRND

DIODE GEN PURP 800V 6A R-6

Technical Specifications

Parameters and characteristics for this part

Specification	6A80GH

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	10 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	R-6, Axial
Qualification	AEC-Q101
Speed [Min]	200 mA, 500 ns
Supplier Device Package	R-6
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If [Max]	1 V

Part	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)	Capacitance @ Vr, F	Mounting Type	Technology	Grade	Speed [Min]	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Supplier Device Package	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Qualification
Taiwan Semiconductor Corporation 6A80GH	1 V	6 A	60 pF	Through Hole	Standard	Automotive	200 mA 500 ns	-55 °C	150 °C	R-6	R-6 Axial	800 V	10 µA	AEC-Q101

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General part information

Diode 800 V 6A Through Hole R-6

Technical documentation and resources