Discrete Semiconductor Products

SI3407HE3-TP

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P-CHANNEL MOSFET,SOT-23

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Discrete Semiconductor Products

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P-CHANNEL MOSFET,SOT-23

Technical Specifications

Parameters and characteristics for this part

Specification	SI3407HE3-TP

Current - Continuous Drain (Id) @ 25°C	4.1 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	1.3 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	SOT-23
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Qualification	Grade
Micro Commercial Components SI3407-TP-HF	SC-59 SOT-23-3 TO-236-3	30 V	350 mW	MOSFET (Metal Oxide)	4.1 A	-55 °C	150 °C	Surface Mount	20 V	10 V	SOT-23	700 pF	3 V	P-Channel
Micro Commercial Components SI3407-TP-HF	SC-59 SOT-23-3 TO-236-3	30 V	350 mW	MOSFET (Metal Oxide)	4.1 A	-55 °C	150 °C	Surface Mount	20 V	10 V	SOT-23	700 pF	3 V	P-Channel
Micro Commercial Components SI3407HE3-TP	SC-59 SOT-23-3 TO-236-3	30 V	1.3 W	MOSFET (Metal Oxide)	4.1 A	-55 °C	150 °C	Surface Mount	20 V	4.5 V 10 V	SOT-23	700 pF	3 V	P-Channel	60 mOhm	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 4.1A 1.3W Surface Mount SOT-23

Technical documentation and resources