Discrete Semiconductor Products

SIHF16N50C-E3

LTB

MOSFET N-CH 500V 16A TO220

Search across all available documentation for this part.

Discrete Semiconductor Products

LTB

MOSFET N-CH 500V 16A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	SIHF16N50C-E3

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	68 nC
Input Capacitance (Ciss) (Max) @ Vds	1900 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	38 W
Rds On (Max) @ Id, Vgs [Max]	380 mOhm
Supplier Device Package	TO-220 Full Pack
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SIHF16N50C-E3	TO-220-3 Full Pack	TO-220 Full Pack	380 mOhm	30 V	Through Hole	1900 pF	MOSFET (Metal Oxide)	N-Channel	500 V	38 W	-55 °C	150 °C	68 nC	5 V	16 A	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 16A (Tc) 38W (Tc) Through Hole TO-220 Full Pack

Technical documentation and resources