Discrete Semiconductor Products

2SD2351T106W

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BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 50 V, 50 MA, 200 MW, SOT-323, SURFACE MOUNT

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Discrete Semiconductor Products

Active

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 50 V, 50 MA, 200 MW, SOT-323, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	2SD2351T106W

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	300 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	820
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-323, SC-70
Power - Max [Max]	200 mW
Supplier Device Package	UMT3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	0.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Vce Saturation (Max) @ Ib, Ic	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Supplier Device Package	Frequency - Transition	Power - Max [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type
Rohm Semiconductor 2SD2351T106V	0.3 V	150 °C	150 mA	50 V	SC-70 SOT-323	UMT3	250 MHz	200 mW	NPN	300 nA	820	Surface Mount
Rohm Semiconductor 2SD2351T106W	0.3 V	150 °C	150 mA	50 V	SC-70 SOT-323	UMT3	250 MHz	200 mW	NPN	300 nA	820	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The 2SD2351T106W is a 0.15A General Purpose Transistor with high DC current gain.

Technical documentation and resources