Discrete Semiconductor Products

BCV47,235

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TRANS NPN DARL 60V 0.5A TO236AB

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Discrete Semiconductor Products

Active

TRANS NPN DARL 60V 0.5A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	BCV47,235

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	10000
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	250 mW
Qualification	AEC-Q101
Supplier Device Package	TO-236AB
Vce Saturation (Max) @ Ib, Ic [Max]	1 V
Voltage - Collector Emitter Breakdown (Max)	60 V

Part	Current - Collector (Ic) (Max) [Max]	Grade	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Qualification	Vce Saturation (Max) @ Ib, Ic [Max]	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Package / Case	Mounting Type	Supplier Device Package
Freescale Semiconductor - NXP BCV47,235	500 mA	Automotive	150 °C	10000	100 nA	AEC-Q101	1 V	60 V	250 mW	SC-59 SOT-23-3 TO-236-3	Surface Mount	TO-236AB

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General part information

Bipolar (BJT) Transistor NPN - Darlington 60 V 500 mA 220MHz 250 mW Surface Mount TO-236AB

Technical documentation and resources