Specification	R6011ENX

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	32 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	670 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	40 W
Supplier Device Package	TO-220FM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

R6011 Series

Part	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature	Supplier Device Package	FET Type	Mounting Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)
Rohm Semiconductor R6011ENX	MOSFET (Metal Oxide)	20 V	670 pF	11 A	32 nC	TO-220-3 Full Pack	600 V	150 °C	TO-220FM	N-Channel	Through Hole	40 W	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly