Specification	SSM6K809R,LF

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.3 nC
Input Capacitance (Ciss) (Max) @ Vds	550 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max) [Max]	1.5 W
Rds On (Max) @ Id, Vgs	36 mOhm
Supplier Device Package	6-TSOP-F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

SSM6K809R Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 6.0 A, 0.036 Ω@10V, TSOP6F

Part	Vgs (Max)	Operating Temperature	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Grade	Technology	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Mounting Type	Supplier Device Package	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Qualification	Rds On (Max) @ Id, Vgs	Package / Case	Gate Charge (Qg) (Max) @ Vgs
Toshiba Semiconductor and Storage SSM6K809R,LXHF	20 V	175 °C	2.5 V	550 pF	Automotive	MOSFET (Metal Oxide)	4 V	10 V	N-Channel	Surface Mount	6-TSOP-F	1.5 W	60 V	6 A	AEC-Q101	36 mOhm	6-SMD Flat Leads	9.3 nC
Toshiba Semiconductor and Storage SSM6K809R,LF	20 V	175 °C	2.5 V	550 pF		MOSFET (Metal Oxide)	4 V	10 V	N-Channel	Surface Mount	6-TSOP-F	1.5 W	60 V	6 A		36 mOhm	6-SMD Flat Leads	9.3 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 6.0 A, 0.036 Ω@10V, TSOP6F

Technical documentation and resources