Discrete Semiconductor Products

BSS8402DW-TP

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MOSFET N/P-CH 60V/50V SOT363

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Discrete Semiconductor Products

Active

MOSFET N/P-CH 60V/50V SOT363

Technical Specifications

Parameters and characteristics for this part

Specification	BSS8402DW-TP

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	115 mA, 130 mA
Drain to Source Voltage (Vdss)	50 V, 60 V
Input Capacitance (Ciss) (Max) @ Vds	50 pF, 30 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	200 mW
Rds On (Max) @ Id, Vgs	10 Ohm, 2 Ohm
Supplier Device Package	SOT-363
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V, 2.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Configuration	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Mounting Type	Power - Max [Max]
Micro Commercial Components BSS8402DW-TP	115 mA 130 mA	N and P-Channel	2 V 2.5 V	MOSFET (Metal Oxide)	SOT-363	-55 °C	150 °C	2 Ohm 10 Ohm	50 V 60 V	30 pF 50 pF	6-TSSOP SC-88 SOT-363	Surface Mount	200 mW

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General part information

Mosfet Array 60V, 50V 115mA, 130mA 200mW Surface Mount SOT-363

Technical documentation and resources