MCQ07P06Y-TP

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Discrete Semiconductor Products

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Technical Specifications

Parameters and characteristics for this part

Specification	MCQ07P06Y-TP

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18.7 nC
Input Capacitance (Ciss) (Max) @ Vds	1100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max) [Max]	3.1 W
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [x]	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Technology	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]
Micro Commercial Components MCQ07NP03A-TP	18 mOhm 23 mOhm	2.2 V 2.5 V	8-SOP	8-SOIC	3.9 mm	0.154 in	526 pF 1497 pF	N and P-Channel	MOSFET (Metal Oxide)	1.9 W	7 A	30 V	-55 °C	150 °C	Surface Mount	28.5 nC	12.22 nC
Micro Commercial Components MCQ07P06Y-TP		2.5 V	8-SOP	8-SOIC	3.9 mm	0.154 in	1100 pF		MOSFET (Metal Oxide)		7 A	60 V	-55 °C	150 °C	Surface Mount			P-Channel	20 V	18.7 nC	4.5 V 10 V	3.1 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	4000	$ 0.29

General part information

P-Channel 60 V 7A 3.1W Surface Mount 8-SOP

Technical documentation and resources