Discrete Semiconductor Products

PMN16XNEX

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MOSFET N-CH 20V 6.9A 6TSOP

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Discrete Semiconductor Products

Active

MOSFET N-CH 20V 6.9A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	PMN16XNEX

Current - Continuous Drain (Id) @ 25°C	6.9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	1136 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-74, SOT-457
Power Dissipation (Max)	6.25 W, 550 mW
Rds On (Max) @ Id, Vgs	19 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	900 mV

Part	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	FET Type	Vgs(th) (Max) @ Id
Freescale Semiconductor - NXP PMN16XNEX	6-TSOP	MOSFET (Metal Oxide)	1.5 V 4.5 V	1136 pF	12 V	6.25 W 550 mW	19 mOhm	-55 °C	150 °C	17 nC	20 V	6.9 A	SC-74 SOT-457	Surface Mount	N-Channel	900 mV

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General part information

N-Channel 20 V 6.9A (Ta) 550mW (Ta), 6.25W (Tc) Surface Mount 6-TSOP

Technical documentation and resources