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Integrated Circuits (ICs)

HM1-6551B/883

Obsolete
Renesas Electronics Corporation

IC SRAM 1KBIT PARA 28QFN

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DocumentsDatasheet
Integrated Circuits (ICs)

HM1-6551B/883

Obsolete
Renesas Electronics Corporation

IC SRAM 1KBIT PARA 28QFN

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationHM1-6551B/883
Access Time220 ns
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization256 x 4
Memory Size128 B
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]125 °C
Operating Temperature [Min]-55 °C
Package / Case28-VFQFN Exposed Pad
Supplier Device Package28-QFN (5x5)
TechnologySRAM - Single Port, Asynchronous
Voltage - Supply [Max]5.5 V
Voltage - Supply [Min]4.5 V
Write Cycle Time - Word, Page320 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

HM-6551/883 Series

The HM-6551/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. On chip latches are provided for address and data outputs allowing efficient interfacing with microprocessor systems. The data output buffers can be forced to a high impedance state for use in expanded memory arrays. The HM-6551/883 is a fully static RAM and may be maintained in any state for an indefinite period of time. Data retention supply voltage and supply current are guaranteed over temperature.

Documents

Technical documentation and resources