Discrete Semiconductor Products

IXFB60N80P

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DISCMOSFETN-CH HIPERFET-POLAR TO-264(3)/ TUBE

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Discrete Semiconductor Products

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DISCMOSFETN-CH HIPERFET-POLAR TO-264(3)/ TUBE

Technical Specifications

Parameters and characteristics for this part

Specification	IXFB60N80P

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	18000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power Dissipation (Max)	1250 W
Rds On (Max) @ Id, Vgs	140 mOhm
Supplier Device Package	PLUS264™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Supplier Device Package	FET Type
Littelfuse/Commercial Vehicle Products IXFB60N80P	5 V	18000 pF	Through Hole	-55 °C	150 °C	1250 W	800 V	60 A	TO-264-3 TO-264AA	140 mOhm	MOSFET (Metal Oxide)	10 V	30 V	PLUS264™	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 800 V 60A (Tc) 1250W (Tc) Through Hole PLUS264™

Technical documentation and resources

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