Discrete Semiconductor Products

CMS25N03V8A-HF

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MOSFET N-CH 30V 25A 8DFN

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Discrete Semiconductor Products

Active

MOSFET N-CH 30V 25A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	CMS25N03V8A-HF

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8 nC
Input Capacitance (Ciss) (Max) @ Vds	500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	21 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	8-PDFN
Supplier Device Package [x]	3
Supplier Device Package [y]	3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Power Dissipation (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs
Comchip Technology CMS25N03V8A-HF	21 W	8-PowerVDFN	18 mOhm	3	8-PDFN	3	2.5 V	-50 °C	150 °C	500 pF	25 A	4.5 V 10 V	MOSFET (Metal Oxide)	N-Channel	Surface Mount	20 V	30 V	8 nC

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General part information

N-Channel 30 V 25A (Tc) 21W (Tc) Surface Mount 8-PDFN (3x3)

Technical documentation and resources

No documents available