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TO-220-3
Discrete Semiconductor Products

FJP13007H1TU-F080

Obsolete
ON Semiconductor

NPN SILICON TRANSISTOR / TUBE ROHS COMPLIANT: YES

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TO-220-3
Discrete Semiconductor Products

FJP13007H1TU-F080

Obsolete
ON Semiconductor

NPN SILICON TRANSISTOR / TUBE ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFJP13007H1TU-F080
Current - Collector (Ic) (Max) [Max]8 A
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]8
Frequency - Transition4 MHz
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3
Power - Max [Max]80 W
Supplier Device PackageTO-220-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic3 V
Voltage - Collector Emitter Breakdown (Max)400 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
NewarkEach 100$ 0.96
500$ 0.85
1000$ 0.74
2500$ 0.60
10000$ 0.58

Description

General part information

FJP13007 Series

NPN Silicon Transistor

Documents

Technical documentation and resources