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SOT457
Discrete Semiconductor Products

PMN25ENEX

NRND
Nexperia USA Inc.

30 V, N-CHANNEL TRENCH MOSFET

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SOT457
Discrete Semiconductor Products

PMN25ENEX

NRND
Nexperia USA Inc.

30 V, N-CHANNEL TRENCH MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationPMN25ENEX
Current - Continuous Drain (Id) @ 25°C6.1 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]18 nC
Input Capacitance (Ciss) (Max) @ Vds597 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-457, SC-74
Power Dissipation (Max)6.25 mW, 560 mW
Rds On (Max) @ Id, Vgs24 mOhm
Supplier Device Package6-TSOP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.41
10$ 0.35
100$ 0.24
500$ 0.19
1000$ 0.15
Digi-Reel® 1$ 0.41
10$ 0.35
100$ 0.24
500$ 0.19
1000$ 0.15
N/A 3000$ 0.86
Tape & Reel (TR) 3000$ 0.12

Description

General part information

PMN25 Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.