Discrete Semiconductor Products

PMN25ENEX

NRND

MOSFET N-CH 30V 6.1A 6TSOP

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Discrete Semiconductor Products

NRND

MOSFET N-CH 30V 6.1A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	PMN25ENEX

Current - Continuous Drain (Id) @ 25°C	6.1 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Input Capacitance (Ciss) (Max) @ Vds	597 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-74, SOT-457
Power Dissipation (Max)	560 mW, 6.25 mW
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Grade	Qualification	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature
Freescale Semiconductor - NXP PMN25ENEH	20 V	30 V	6.25 mW 560 mW	MOSFET (Metal Oxide)	N-Channel	2.5 V	6-TSOP	Surface Mount	SC-74 SOT-457	6.1 A	18 nC	597 pF	24 mOhm	-55 °C	150 °C	4.5 V 10 V
Freescale Semiconductor - NXP PMN25ENEAX	20 V	30 V	7.5 W 667 mW	MOSFET (Metal Oxide)	N-Channel	2.5 V	6-TSOP	Surface Mount	SC-74 SOT-457	6.4 A		440 pF	24 mOhm	-55 °C	175 ░C	4.5 V 10 V	Automotive	AEC-Q101	14 nC
Freescale Semiconductor - NXP PMN25ENEX	20 V	30 V	6.25 mW 560 mW	MOSFET (Metal Oxide)	N-Channel	2.5 V	6-TSOP	Surface Mount	SC-74 SOT-457	6.1 A	18 nC	597 pF	24 mOhm			4.5 V 10 V				150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 6.1A (Ta) 560mW (Ta), 6.25mW (Tc) Surface Mount 6-TSOP

Technical documentation and resources