Specification	NSBA123EDXV6T1G

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	8 hFE
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Power - Max [Max]	500 mW
Resistor - Base (R1)	2.2 kOhm
Resistor - Emitter Base (R2)	2.2 kOhms
Supplier Device Package	SOT-563
Transistor Type	2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

NSBA123JDXV6 Series

Dual PNP Bipolar Digital Transistor (BRT)

Part	Resistor - Emitter Base (R2)	Transistor Type	Power - Max [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Resistor - Base (R1)	DC Current Gain (hFE) (Min) @ Ic, Vce
ON Semiconductor NSBA123JDXV6T1G	47000 Ohms	2 PNP - Pre-Biased (Dual)	500 mW	Surface Mount	50 V	SOT-563 SOT-666	SOT-563	100 mA	80	500 nA	250 mV	2.2 kOhm
ON Semiconductor NSBA123JDXV6T1	47000 Ohms	2 PNP - Pre-Biased (Dual)	500 mW	Surface Mount	50 V	SOT-563 SOT-666	SOT-563	100 mA	80	500 nA	250 mV	2.2 kOhm
ON Semiconductor NSBA123JDP6T5G	47000 Ohms	2 PNP - Pre-Biased (Dual)	408 mW	Surface Mount	50 V	SOT-963	SOT-963	100 mA	80	500 nA	250 mV	2.2 kOhm
ON Semiconductor NSBA123EDXV6T1G	2.2 kOhms	2 PNP - Pre-Biased (Dual)	500 mW	Surface Mount	50 V	SOT-563 SOT-666	SOT-563	100 mA		500 nA	250 mV	2.2 kOhm	8 hFE
ON Semiconductor NSBA123EF3T5G	2.2 kOhms	PNP - Pre-Biased	254 mW	Surface Mount	50 V	SOT-1123	SOT-1123	100 mA		500 nA	250 mV	2.2 kOhm	8 hFE

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.42
	Digi-Reel®	1	$ 0.42
	Tape & Reel (TR)	4000	$ 0.08
		8000	$ 0.07
		12000	$ 0.06
		28000	$ 0.06
		100000	$ 0.05
Newark	Each (Supplied on Cut Tape)	2500	$ 0.07
ON Semiconductor	N/A	1	$ 0.05

Description

General part information

NSBA123JDXV6 Series

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet

Package Drawing-463A-01-SOT-563-6 1.60x1.20x0.55, 0.50P

Package Drawing