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TL431BFDT-QR
Discrete Semiconductor Products

MMBTA92-QR

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Nexperia USA Inc.

PNP HIGH-VOLTAGE TRANSISTOR

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TL431BFDT-QR
Discrete Semiconductor Products

MMBTA92-QR

Active
Nexperia USA Inc.

PNP HIGH-VOLTAGE TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationMMBTA92-QR
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]250 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40
Frequency - Transition50 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]250 mW
QualificationAEC-Q101
Supplier Device PackageTO-236AB
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]300 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.25
10$ 0.17
100$ 0.08
500$ 0.07
1000$ 0.05
Digi-Reel® 1$ 0.25
10$ 0.17
100$ 0.08
500$ 0.07
1000$ 0.05
N/A 2376$ 0.28
Tape & Reel (TR) 3000$ 0.04
6000$ 0.04
9000$ 0.03
30000$ 0.03
75000$ 0.03
150000$ 0.02

Description

General part information

MMBTA92-Q Series

PNP high-voltage transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package.