Specification	DS1250ABP-100+

Access Time	100 ns
Memory Format	NVSRAM
Memory Interface	Parallel
Memory Organization	512 K
Memory Size	512 kB
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	70 °C
Operating Temperature [Min]	0 °C
Package / Case	34-PowerCap™ Module
Supplier Device Package	34-PowerCap Module
Technology	NVSRAM (Non-Volatile SRAM)
Voltage - Supply [Max]	5.25 V
Voltage - Supply [Min]	4.75 V
Write Cycle Time - Word, Page [x]	100 ns
Write Cycle Time - Word, Page [y]	100 ns

DS1250AB Series

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	Memory Size	Access Time	Mounting Type	Technology	Memory Format	Write Cycle Time - Word, Page [y]	Write Cycle Time - Word, Page [x]	Memory Interface	Memory Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Organization	Write Cycle Time - Word, Page	Package / Case	Package / Case
Analog Devices Inc./Maxim Integrated DS1250ABP-100	0 °C	70 °C	34-PowerCap Module	34-PowerCap™ Module	512 kB	100 ns	Surface Mount	NVSRAM (Non-Volatile SRAM)	NVSRAM	100 ns	100 ns	Parallel	Non-Volatile	4.75 V	5.25 V	512 K
Analog Devices Inc./Maxim Integrated DS1250ABP-70IND	-40 ¯C	85 C	34-PowerCap Module	34-PowerCap™ Module	512 kB	70 ns	Surface Mount	NVSRAM (Non-Volatile SRAM)	NVSRAM			Parallel	Non-Volatile	4.75 V	5.25 V	512 K	70 ns
Analog Devices Inc./Maxim Integrated DS1250AB-70IND+	-40 ¯C	85 C	32-EDIP	32-DIP Module	512 kB	70 ns	Through Hole	NVSRAM (Non-Volatile SRAM)	NVSRAM			Parallel	Non-Volatile	4.75 V	5.25 V	512 K	70 ns	15.24 mm	0.6 in
Analog Devices Inc./Maxim Integrated DS1250AB-100	0 °C	70 °C	32-EDIP	32-DIP Module	512 kB	100 ns	Through Hole	NVSRAM (Non-Volatile SRAM)	NVSRAM	100 ns	100 ns	Parallel	Non-Volatile	4.75 V	5.25 V	512 K		15.24 mm	0.6 in
Analog Devices Inc./Maxim Integrated DS1250AB-70IND	-40 ¯C	85 C	32-EDIP	32-DIP Module	512 kB	70 ns	Through Hole	NVSRAM (Non-Volatile SRAM)	NVSRAM			Parallel	Non-Volatile	4.75 V	5.25 V	512 K	70 ns	15.24 mm	0.6 in
Analog Devices Inc./Maxim Integrated DS1250AB-70	0 °C	70 °C	32-EDIP	32-DIP Module	512 kB	70 ns	Through Hole	NVSRAM (Non-Volatile SRAM)	NVSRAM			Parallel	Non-Volatile	4.75 V	5.25 V	512 K	70 ns	15.24 mm	0.6 in
Analog Devices Inc./Maxim Integrated DS1250ABP-70IND+	-40 ¯C	85 C	34-PowerCap Module	34-PowerCap™ Module	512 kB	70 ns	Surface Mount	NVSRAM (Non-Volatile SRAM)	NVSRAM			Parallel	Non-Volatile	4.75 V	5.25 V	512 K	70 ns
Analog Devices Inc./Maxim Integrated DS1250AB-100IND+	-40 ¯C	85 C	32-EDIP	32-DIP Module	512 kB	100 ns	Through Hole	NVSRAM (Non-Volatile SRAM)	NVSRAM	100 ns	100 ns	Parallel	Non-Volatile	4.75 V	5.25 V	512 K		15.24 mm	0.6 in
Analog Devices Inc./Maxim Integrated DS1250AB-100IND	-40 ¯C	85 C	32-EDIP	32-DIP Module	512 kB	100 ns	Through Hole	NVSRAM (Non-Volatile SRAM)	NVSRAM	100 ns	100 ns	Parallel	Non-Volatile	4.75 V	5.25 V	512 K		15.24 mm	0.6 in
Analog Devices Inc./Maxim Integrated DS1250ABP-100+	0 °C	70 °C	34-PowerCap Module	34-PowerCap™ Module	512 kB	100 ns	Surface Mount	NVSRAM (Non-Volatile SRAM)	NVSRAM	100 ns	100 ns	Parallel	Non-Volatile	4.75 V	5.25 V	512 K

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Description

General part information

DS1250AB Series

The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1250 devices can be used in place of existing 512k x 8 static RAMs directly conforming to the popular byte-wide 32-pin DIP standard. DS1250 devices in the PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete Nonvolatile SRAM module. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

Documents

Technical documentation and resources

DS1250AB-DS1250Y: 4096k Nonvolatile SRAM Data Sheet (Rev.4)

Data Sheet

Package Drawing - PowerCap Module

Package Drawing