Discrete Semiconductor Products

IXTH220N20X4

Active

Littelfuse/Commercial Vehicle Products

MOSFET, N-CH, 200V, 220A, TO-247 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

IXTH220N20X4

Active

Littelfuse/Commercial Vehicle Products

MOSFET, N-CH, 200V, 220A, TO-247 ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTH220N20X4

Current - Continuous Drain (Id) @ 25°C	220 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	157 nC
Input Capacitance (Ciss) (Max) @ Vds	12300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	800 W
Rds On (Max) @ Id, Vgs	5.5 mOhm
Supplier Device Package	ISO TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IXTH220N20X4 Series

Discrete MOSFET 220A 200V X4 TO247

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Technology	Power Dissipation (Max)	Package / Case	Mounting Type	Supplier Device Package	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
Littelfuse/Commercial Vehicle Products IXTH220N20X4	4.5 V	10 V	5.5 mOhm	N-Channel	200 V	220 A	MOSFET (Metal Oxide)	800 W	TO-247-3	Through Hole	ISO TO-247-3	20 V	-55 °C	175 ░C	12300 pF	157 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 18.36
		30	$ 14.86
		120	$ 13.99
		510	$ 12.67
Newark	Each	1	$ 17.99
		5	$ 17.14
		10	$ 16.28
		25	$ 15.42
		100	$ 14.56
		500	$ 13.71
		1000	$ 12.42

Description

General part information

IXTH220N20X4 Series

The new 200V X4 Ultra Junction MOSFETs are designed with the latest Ultra Junction technology for high efficiency power applications. They are available in TO-247 and TO-268HV Packages. They offer lower RDS(on) simultaneously with reduced gate and output charges, which allows for more efficient switching at given frequency.

Documents

Technical documentation and resources