IXFX100N65X2
ActivePOWER MOSFET, N CHANNEL, 650 V, 100 A, 0.03 OHM, PLUS247, THROUGH HOLE
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IXFX100N65X2
ActivePOWER MOSFET, N CHANNEL, 650 V, 100 A, 0.03 OHM, PLUS247, THROUGH HOLE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IXFX100N65X2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 100 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 11300 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 Variant |
| Power Dissipation (Max) | 1040 W |
| Rds On (Max) @ Id, Vgs | 30 mOhm |
| Supplier Device Package | PLUS247™-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 18.63 | |
| 30 | $ 15.08 | |||
| 120 | $ 14.20 | |||
| 510 | $ 12.87 | |||
Description
General part information
IXFX100N65X2 Series
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings
Documents
Technical documentation and resources