Discrete Semiconductor Products

2N3763

Obsolete

TRANSISTOR

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	2N3763

Current - Collector (Ic) (Max) [Max]	1.5 A
Current - Collector Cutoff (Max) [Max]	100 nA
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-39-3 Metal Can, TO-205AD
Power - Max [Max]	1 W
Supplier Device Package	TO-39
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	900 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Supplier Device Package	Frequency - Transition	Package / Case	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]
Central Semiconductor Corp 2N3468	200 °C	-65 °C	40	50 V	100 nA	PNP	TO-39	150 MHz	TO-205AD TO-39-3 Metal Can	Through Hole	1.2 V	1 A	1 W
Central Semiconductor Corp 2N3763	200 °C	-65 °C		50 V	100 nA	PNP	TO-39		TO-205AD TO-39-3 Metal Can	Through Hole	900 mV	1.5 A	1 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 50 V 1.5 A 1 W Through Hole TO-39

Technical documentation and resources