Discrete Semiconductor Products

BSP32,115

LTB

TRANS PNP 80V 1A SOT223

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Discrete Semiconductor Products

LTB

TRANS PNP 80V 1A SOT223

Technical Specifications

Parameters and characteristics for this part

Specification	BSP32,115

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Frequency - Transition	100 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-261AA, TO-261-4
Power - Max	1.3 W
Qualification	AEC-Q100
Supplier Device Package	SOT-223
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Qualification	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Mounting Type	Operating Temperature	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Grade	Power - Max	Current - Collector Cutoff (Max) [Max]
Freescale Semiconductor - NXP BSP32,115	40	500 mV	PNP	AEC-Q100	100 MHz	1 A	Surface Mount	150 °C	TO-261-4 TO-261AA	80 V	SOT-223	Automotive	1.3 W	100 nA

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General part information

Bipolar (BJT) Transistor PNP 80 V 1 A 100MHz 1.3 W Surface Mount SOT-223

Technical documentation and resources