Discrete Semiconductor Products

SI1441EDH-T1-BE3

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MOSFET P-CH 20V 4A/4A SC70-6

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Discrete Semiconductor Products

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MOSFET P-CH 20V 4A/4A SC70-6

Technical Specifications

Parameters and characteristics for this part

Specification	SI1441EDH-T1-BE3

Current - Continuous Drain (Id) @ 25°C	4 A, 4 A
Drain to Source Voltage (Vdss)	20 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	33 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power Dissipation (Max)	1.6 W, 2.8 W
Rds On (Max) @ Id, Vgs	41 mOhm
Supplier Device Package	SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SI1441EDH-T1-BE3	Surface Mount	-55 °C	150 °C	4 A 4 A	1.6 W 2.8 W	6-TSSOP SC-88 SOT-363	33 nC	10 V	P-Channel	1 V	SC-70-6	MOSFET (Metal Oxide)	20 V	41 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 4A (Ta), 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SC-70-6

Technical documentation and resources