Discrete Semiconductor Products

SUP53P06-20-GE3

Obsolete

MOSFET P-CH 60V 9.2A/53A TO220AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 60V 9.2A/53A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP53P06-20-GE3

Current - Continuous Drain (Id) @ 25°C	9.2 A, 53 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	115 nC
Input Capacitance (Ciss) (Max) @ Vds	3500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	3.1 W, 104.2 W
Rds On (Max) @ Id, Vgs	19.5 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Technology	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Mounting Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SUP53P06-20-GE3	TO-220AB	TO-220-3	9.2 A 53 A	60 V	20 V	3500 pF	19.5 mOhm	MOSFET (Metal Oxide)	3 V	-55 °C	150 °C	P-Channel	Through Hole	3.1 W 104.2 W	4.5 V 10 V	115 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 9.2A (Ta), 53A (Tc) 3.1W (Ta), 104.2W (Tc) Through Hole TO-220AB

Technical documentation and resources