Specification	FFSPF0665A

Capacitance @ Vr, F	361 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2 Full Pack
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220F-2FS
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.75 V

FFSPF0665A Series

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D1, TO-220FP-2L

Part	Mounting Type	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Package / Case	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Reverse Recovery Time (trr)
ON Semiconductor FFSPF0665A	Through Hole	TO-220F-2FS	1.75 V	6 A	TO-220-2 Full Pack	No Recovery Time	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	650 V	200 µA	361 pF	0 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 3.19
		50	$ 2.53
		100	$ 2.17
		500	$ 1.92

Description

General part information

FFSPF0665A Series

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Llew