Specification	NTTFS6H888NLTAG

Current - Continuous Drain (Id) @ 25°C	14 A, 4.9 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	3 nC
Input Capacitance (Ciss) (Max) @ Vds	258 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	2.9 W, 23 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	8-WDFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

NTTFS6H888NL Series

Single N-Channel Power MOSFET 80V, 14A, 50mΩ

Part	Gate Charge (Qg) (Max) @ Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor NTTFS6H888NLTAG	3 nC	N-Channel	-55 °C	175 ░C	80 V	4.5 V 10 V	8-WDFN (3.3x3.3)	2 V	2.9 W 23 W	8-PowerWDFN	4.9 A 14 A	MOSFET (Metal Oxide)	20 V	Surface Mount	50 mOhm	258 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Industrial Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance.