Discrete Semiconductor Products

FDMS0310AS

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PT8 N 30/20 SYNCFET / REEL ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

PT8 N 30/20 SYNCFET / REEL ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	FDMS0310AS

Current - Continuous Drain (Id) @ 25°C	22 A, 19 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2280 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.5 W, 41 W
Rds On (Max) @ Id, Vgs	4.3 mOhm
Supplier Device Package	8-PQFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Mounting Type
ON Semiconductor FDMS0310AS	20 V	2.5 W 41 W	3 V	N-Channel	4.3 mOhm	MOSFET (Metal Oxide)	8-PQFN (5x6)	30 V	2280 pF	-55 °C	150 °C	19 A 22 A	4.5 V 10 V	8-PowerTDFN	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Max rDS(on) = 4.3 mO at VGS = 10 V, ID = 19 A

Max rDS(on) = 5.2 mO at VGS = 4.5 V, ID = 17 A

Advanced package and Silicon combination for low rDS(on) and high efficiency

Technical documentation and resources