Discrete Semiconductor Products

KSH210TF

Obsolete

PNP EPITAXIAL SILICON TRANSISTOR

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Discrete Semiconductor Products

Obsolete

PNP EPITAXIAL SILICON TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	KSH210TF

Current - Collector (Ic) (Max)	5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	45 hFE
Frequency - Transition	65 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	1.4 W
Supplier Device Package	DPAK
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.8 V
Voltage - Collector Emitter Breakdown (Max)	25 V

PNP Epitaxial Silicon Transistor

Part	Current - Collector Cutoff (Max) [Max]	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce	Frequency - Transition	Supplier Device Package	Mounting Type	Current - Collector (Ic) (Max)	Transistor Type	Package / Case	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]
ON Semiconductor KSH210TM	100 nA	150 °C	45 hFE	65 MHz	DPAK	Surface Mount	5 A	PNP	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.8 V	25 V	1.4 W
ON Semiconductor KSH210TF	100 nA	150 °C	45 hFE	65 MHz	DPAK	Surface Mount	5 A	PNP	DPAK (2 Leads + Tab) SC-63 TO-252-3	1.8 V	25 V	1.4 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$