Discrete Semiconductor Products

PHX9NQ20T,127

Obsolete

MOSFET N-CH 200V 5.2A TO220F

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 5.2A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	PHX9NQ20T,127

Current - Continuous Drain (Id) @ 25°C	5.2 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	959 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	FET Type	Vgs (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]
Freescale Semiconductor - NXP PHX9NQ20T,127	5.2 A	TO-220-3 Full Pack Isolated Tab	25 W	400 mOhm	200 V	MOSFET (Metal Oxide)	N-Channel	20 V	TO-220F	959 pF	10 V	24 nC	Through Hole	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 5.2A (Tc) 25W (Tc) Through Hole TO-220F

Technical documentation and resources