Discrete Semiconductor Products

PHX9NQ20T,127

Obsolete

MOSFET N-CH 200V 5.2A TO220F

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 5.2A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	PHX9NQ20T,127

Current - Continuous Drain (Id) (Tc)	5.2 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	24 nC, 24 nC
Input Capacitance (Ciss) (Max)	959 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Package Name	TO-220F
Power Dissipation (Max)	25 W
Rds On (Max)	400 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	Gate Charge (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Rds On (Max)	Package Name	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	FET Type	Vgs (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)
NXP USA Inc. PHX9NQ20T,127	24 nC 24 nC	10 V	Through Hole	Isolated Tab TO-220-3 Full Pack	400 mOhm	TO-220F	959 pF	25 W	MOSFET (Metal Oxide)	-55 °C	150 °C	5.2 A	N-Channel	20 V	4 V	200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 200 V 5.2A (Tc) 25W (Tc) Through Hole TO-220F

Technical documentation and resources