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Technical Specifications
Parameters and characteristics for this part
| Specification | US5U1TR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 2.5 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 4.5 V |
| FET Feature | Schottky Diode (Isolated) |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 2.2 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 80 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 6-SMD (5 Leads), Flat Leads |
| Power Dissipation (Max) | 1 W |
| Rds On (Max) @ Id, Vgs | 240 mOhm |
| Supplier Device Package | TUMT5 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 2719 | $ 0.64 | |
Description
General part information
US5U1 Series
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
Documents
Technical documentation and resources