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ONSEMI FDPF33N25T
Discrete Semiconductor Products

FDPF39N20

Active
ON Semiconductor

POWER MOSFET, N-CHANNEL, UNIFET<SUP>TM</SUP>, 200V, 39A, 66MΩ, TO-220F

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ONSEMI FDPF33N25T
Discrete Semiconductor Products

FDPF39N20

Active
ON Semiconductor

POWER MOSFET, N-CHANNEL, UNIFET<SUP>TM</SUP>, 200V, 39A, 66MΩ, TO-220F

Technical Specifications

Parameters and characteristics for this part

SpecificationFDPF39N20
Current - Continuous Drain (Id) @ 25°C39 A
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs10 V, 49 nC
Input Capacitance (Ciss) (Max) @ Vds2130 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max) [Max]37 W
Rds On (Max) @ Id, Vgs66 mOhm
Supplier Device PackageTO-220F-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.08
50$ 1.67
100$ 1.37
500$ 1.16
1000$ 0.99
2000$ 0.94
5000$ 0.90
10000$ 0.87
NewarkEach 1$ 2.74
10$ 1.79
100$ 1.67
500$ 1.51
1000$ 1.46
3000$ 1.43
ON SemiconductorN/A 1$ 0.93

Description

General part information

FDPF39N20 Series

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.