Discrete Semiconductor Products

APT13GP120KG

Obsolete

IGBT 1200V 41A 250W TO220

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Discrete Semiconductor Products

Obsolete

IGBT 1200V 41A 250W TO220

Technical Specifications

Parameters and characteristics for this part

Specification	APT13GP120KG

Current - Collector (Ic) (Max) [Max]	41 A
Current - Collector Pulsed (Icm)	50 A
Gate Charge	55 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	250 W
Supplier Device Package	TO-220 [K]
Switching Energy	114 µJ, 165 µJ
Td (on/off) @ 25°C [custom]	28 ns
Td (on/off) @ 25°C [custom]	9 ns
Test Condition	600 V, 15 V, 5 Ohm, 13 A
Vce(on) (Max) @ Vge, Ic	3.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Package / Case	Supplier Device Package	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Gate Charge	Operating Temperature [Max]	Operating Temperature [Min]	Power - Max [Max]	Switching Energy	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	IGBT Type	Test Condition	Mounting Type
Microsemi Corporation APT13GP120KG	1200 V	41 A	TO-220-3	TO-220 [K]	50 A	3.9 V	55 nC	150 °C	-55 °C	250 W	114 µJ 165 µJ	28 ns	9 ns	PT	5 Ohm 13 A 15 V 600 V	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

IGBT PT 1200 V 41 A 250 W Through Hole TO-220 [K]

Technical documentation and resources