Discrete Semiconductor Products

UPA2463T1Q-E1-AX

Obsolete

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2463T1Q-E1-AX

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	680 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-WFDFN Exposed Pad
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	8-HUSON
Supplier Device Package [x]	2.7
Supplier Device Package [y]	2
Technology	MOSFET (Metal Oxide)

N-Channel Mos Field Effect Transistor For Switching

Part	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Power Dissipation (Max)	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Mounting Type
Renesas Electronics Corporation UPA2463T1Q-E1-AX	6 A	MOSFET (Metal Oxide)	20 V	N-Channel	8-WFDFN Exposed Pad	1 W	2.7	8-HUSON	2	150 °C	680 pF	7 nC	20 mOhm	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	24000	$ 0.60

General part information

The UPA2463T1Q is a N-Channel Mos Field Effect Transistor For Switching.

Technical documentation and resources