Specification	NDF02N60ZG

Current - Continuous Drain (Id) @ 25°C	2.4 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.1 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	274 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	24 W
Rds On (Max) @ Id, Vgs	4.8 Ohm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

NDF02N60Z Series

Power MOSFET 600V 2.4A 4.8 Ohm Single N-Channel TO-220FP

Part	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NDF02N60ZG	N-Channel	10 V	MOSFET (Metal Oxide)	274 pF	TO-220-3 Full Pack	30 V	-55 °C	150 °C	4.5 V	600 V	24 W	TO-220FP	10.1 nC	Through Hole	4.8 Ohm	2.4 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET 600V 4.8 Ohm Single N-Channel

Technical documentation and resources