Specification	NTMFS4899NFT1G

Current - Continuous Drain (Id) @ 25°C	10.4 A, 75 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1600 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	48 W, 920 mW
Rds On (Max) @ Id, Vgs	5 mOhm
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

NTMFS4899N Series

Single N-Channel Power MOSFET 30V, 75A, 5mΩ

Part	Supplier Device Package	Supplier Device Package	Power Dissipation (Max)	Technology	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)
ON Semiconductor NTMFS4899NFT1G	5-DFN (5x6)	8-SOFL	48 W 920 mW	MOSFET (Metal Oxide)	8-PowerTDFN 5 Leads	Surface Mount	5 mOhm	20 V	-55 °C	150 °C	25 nC	2.5 V	1600 pF	10.4 A 75 A	4.5 V 10 V	N-Channel	30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Newark	Each (Supplied on Cut Tape)	25	$ 0.63

General part information

This 30V N-Channel power MOSFET contains an integrated Schottky diode.

Technical documentation and resources