Specification	ECH8663R-TL-H

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	1.5 W
Rds On (Max) @ Id, Vgs	20.5 mOhm
Supplier Device Package	8-ECH
Technology	MOSFET (Metal Oxide)

ECH8663R Series

Dual N-Channel Power MOSFET, 30V, 8A, 20.5mΩ

Part	FET Feature	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature	Technology	Mounting Type	Configuration	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs
ON Semiconductor ECH8663R-TL-H	Logic Level Gate	8-ECH	30 V	150 °C	MOSFET (Metal Oxide)	Surface Mount	2 N-Channel (Dual)	1.5 W	8 A	20.5 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

ECH8663R is an N-Channel Power MOSFET, 30V, 8A, 20.5mΩ, Dual ECH8 for General-Purpose Switching Device Applications.