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TO-261-4, TO-261AA
Discrete Semiconductor Products

PBHV8110DW_R2_00001

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Panjit International Inc.

NPN LOW VCE(SAT) TRANSISTOR

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DocumentsDatasheet
TO-261-4, TO-261AA
Discrete Semiconductor Products

PBHV8110DW_R2_00001

Active
Panjit International Inc.

NPN LOW VCE(SAT) TRANSISTOR

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationPBHV8110DW_R2_00001
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]140 hFE
Frequency - Transition100 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-261AA, TO-261-4
Power - Max [Max]2.6 W
Supplier Device PackageSOT-223
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic450 mV
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.44
10$ 0.27
Digi-Reel® 1$ 0.44
10$ 0.27
Tape & Reel (TR) 2500$ 0.10
5000$ 0.09
7500$ 0.09
12500$ 0.08
17500$ 0.08
25000$ 0.07
62500$ 0.07
125000$ 0.06

Description

General part information

PBHV8110 Series

Bipolar (BJT) Transistor NPN 100 V 1 A 100MHz 2.6 W Surface Mount SOT-223

Documents

Technical documentation and resources