Discrete Semiconductor Products

SH8M41GZETB

NRND

MOSFET N/P-CH 80V 3.4A/2.6A 8SOP

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Discrete Semiconductor Products

NRND

MOSFET N/P-CH 80V 3.4A/2.6A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	SH8M41GZETB

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	2.6 A, 3.4 A
Drain to Source Voltage (Vdss)	80 V
FET Feature	Logic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs	9.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	600 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	0.154 in
Package / Case	8-SOIC
Package / Case	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	130 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

80V Nch+Pch Power MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	FET Feature	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Technology	Package / Case	Package / Case	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature	Drain to Source Voltage (Vdss)	Configuration	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id
Rohm Semiconductor SH8M41GZETB	9.2 nC	Surface Mount	Logic Level Gate 4V Drive	2.6 A 3.4 A	2 W	MOSFET (Metal Oxide)	0.154 in	8-SOIC	3.9 mm	130 mOhm	8-SOP	150 °C	80 V	N and P-Channel	600 pF	2.5 V
Rohm Semiconductor SH8M41TB1	9.2 nC	Surface Mount	Logic Level Gate	2.6 A 3.4 A	2 W	MOSFET (Metal Oxide)	0.154 in	8-SOIC	3.9 mm	130 mOhm	8-SOP	150 °C	80 V	N and P-Channel	600 pF	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

SH8M41 is low on-resistance MOSFET, suitable for switching application.

Technical documentation and resources