Specification	NTHL070N120M3S

Current - Continuous Drain (Id) @ 25°C	34 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	57 nC
Input Capacitance (Ciss) (Max) @ Vds	1230 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Rds On (Max) @ Id, Vgs	87 mOhm
Supplier Device Package	TO-247-3
Technology	SiC (Silicon Carbide Junction Transistor)
Vgs (Max) [Max]	22 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	4.4 V

NTHL070N120M3S Series

Silicon Carbide (SiC) MOSFET – EliteSiC, 65 mohm, 1200 V, M3S, TO-247-3L

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Package / Case	Technology	Vgs (Max) [Min]	Vgs (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Mounting Type
ON Semiconductor NTHL070N120M3S	34 A	57 nC	1200 V	87 mOhm	TO-247-3	TO-247-3	SiC (Silicon Carbide Junction Transistor)	-10 V	22 V	18 V	4.4 V	-55 °C	175 ░C	1230 pF	N-Channel	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 8.52
		10	$ 5.81
		100	$ 4.28
		500	$ 3.70
ON Semiconductor	N/A	1	$ 3.94

Description

General part information

NTHL070N120M3S Series

The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.

Documents

Technical documentation and resources

Datasheet

Package Drawing-340CX-TO-247-3LD

Package Drawing

Product Change Notice EN

Datasheet