SMUN5216DW1T1G-M02

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DUAL NPN BIPOLAR DIGITAL TRANSIS

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Discrete Semiconductor Products

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DUAL NPN BIPOLAR DIGITAL TRANSIS

Technical Specifications

Parameters and characteristics for this part

Specification	SMUN5216DW1T1G-M02

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Part	Resistor - Base (R1)	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Package / Case	Transistor Type	Qualification	Grade
ON Semiconductor MUN5216DW1T1	4.7 kOhms	500 nA	250 mV	160 hFE	250 mW	SC-88 SC70-6 SOT-363	100 mA	50 V	Surface Mount	6-TSSOP SC-88 SOT-363	2 NPN - Pre-Biased (Dual)
ON Semiconductor SMUN5216DW1T1G-M02
ON Semiconductor NSVMUN5216T1G	4.7 kOhms	500 nA	250 mV	160 hFE	202 mW		100 mA	50 V	Surface Mount	SC-70 SOT-323	NPN - Pre-Biased	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	981	$ 0.51

General part information

Pre-Biased Bipolar Transistor (BJT)

Technical documentation and resources

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