Specification	HGTD7N60C3S9A

Current - Collector (Ic) (Max) [Max]	14 A
Current - Collector Pulsed (Icm)	56 A
Gate Charge	23 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	60 W
Supplier Device Package	TO-252AA
Switching Energy	600 µJ, 165 µJ
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

HGTD7N60C3S Series

14A,600V, UFS Series N-Channel IGBTs

Part	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Mounting Type	Switching Energy	Gate Charge	Current - Collector Pulsed (Icm)	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Supplier Device Package
ON Semiconductor HGTD7N60C3S9A	60 W	14 A	2 V	Surface Mount	165 µJ 600 µJ	23 nC	56 A	150 °C	-40 °C	600 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252AA
ON Semiconductor HGTD7N60C3S9A	60 W	14 A	2 V	Surface Mount	165 µJ 600 µJ	23 nC	56 A	150 °C	-40 °C	600 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252 (DPAK)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

14A,600V, UFS Series N-Channel IGBTs

Technical documentation and resources