Specification	FCH170N60

Current - Continuous Drain (Id) @ 25°C	22 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC
Input Capacitance (Ciss) (Max) @ Vds	2860 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	227 W
Rds On (Max) @ Id, Vgs	170 mOhm
Supplier Device Package	TO-247
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

FCH170N60 Series

Power MOSFET, N-Channel, SUPERFET® II, FAST, 600 V, 22 A, 170 mΩ, TO-247

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package
ON Semiconductor FCH170N60	-55 °C	150 °C	TO-247-3	10 V	Through Hole	2860 pF	MOSFET (Metal Oxide)	227 W	170 mOhm	N-Channel	3.5 V	20 V	55 nC	22 A	600 V	TO-247

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	94	$ 3.19
Newark	Each	250	$ 3.03
		500	$ 2.94
ON Semiconductor	N/A	1	$ 2.54

Description

General part information

FCH170N60 Series

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.