Discrete Semiconductor Products

MCG04N10A-TP

Obsolete

MOSFET N-CH 100V 4A DFN3030-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 4A DFN3030-8

Technical Specifications

Parameters and characteristics for this part

Specification	MCG04N10A-TP

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	612 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max) [Max]	25 W
Rds On (Max) @ Id, Vgs	105 mOhm
Supplier Device Package	DFN3030-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.6 V

Part	Mounting Type	Power Dissipation (Max) [Max]	FET Type	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Vgs (Max)	Drain to Source Voltage (Vdss)
Micro Commercial Components MCG04N10A-TP	Surface Mount	25 W	N-Channel	MOSFET (Metal Oxide)	DFN3030-8	11 nC	-55 °C	150 °C	4 A	10 V	8-PowerWDFN	105 mOhm	612 pF	2.6 V	20 V	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 4A (Tj) 25W Surface Mount DFN3030-8

Technical documentation and resources