Specification	FJP5555TU

Current - Collector (Ic) (Max)	5 A
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	75 W
Supplier Device Package	TO-220-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max)	400 V

FJP5555 Series

NPN Silicon Transistor

Part	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max)	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	Package / Case	Operating Temperature	Power - Max [Max]	Mounting Type
ON Semiconductor FJP5555TU	1.5 V	5 A	TO-220-3	20	400 V	NPN	TO-220-3	150 °C	75 W	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	647	$ 0.46
Newark	Each	1000	$ 0.53
		2500	$ 0.43
		10000	$ 0.42
ON Semiconductor	N/A	1	$ 0.43

Description

General part information

FJP5555 Series

The FJP5555 is a 1050 V 5 A NPN Silicon Epitaxial Planar Transistor. The FJP5555 is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in design and excellent Power Dissipation.