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Discrete Semiconductor Products

IXFA16N60P3

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Littelfuse/Commercial Vehicle Products

POLAR 16A 600V TO-263 D2PAK MOSFET/ TUBE

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Discrete Semiconductor Products

IXFA16N60P3

Active

Littelfuse/Commercial Vehicle Products

POLAR 16A 600V TO-263 D2PAK MOSFET/ TUBE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFA16N60P3

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1830 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	347 W
Rds On (Max) @ Id, Vgs	440 mOhm
Supplier Device Package	TO-263AA (IXFA)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

IXFA16N60P3 Series

DiscMosfetN-CH HiPerFET-Polar TO-263D2

Part	Mounting Type	Power Dissipation (Max) [Max]	Package / Case	FET Type	Technology	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
Littelfuse/Commercial Vehicle Products IXFA16N50P	Surface Mount	300 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	MOSFET (Metal Oxide)	400 mOhm	10 V	43 nC	2250 pF	30 V	-55 °C	150 °C	TO-263AA (IXFA)	5.5 V	16 A	500 V
Littelfuse/Commercial Vehicle Products IXFA16N50P3	Surface Mount		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	MOSFET (Metal Oxide)	360 mOhm	10 V	29 nC	1515 pF	30 V	-55 °C	150 °C	TO-263AA (IXFA)	5 V	16 A	500 V	330 W
Littelfuse/Commercial Vehicle Products IXFA16N60P3	Surface Mount		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	MOSFET (Metal Oxide)	440 mOhm	10 V	36 nC		30 V	-55 °C	150 °C	TO-263AA (IXFA)	5 V	16 A	600 V	347 W	1830 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 5.22
Newark	Each	250	$ 4.56
		500	$ 4.24

Description

General part information

IXFA16N60P3 Series

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings

Documents

Technical documentation and resources

No documents available